欢迎您!
东篱公司
退出
申报数据库
申报指南
立项数据库
成果数据库
期刊论文
会议论文
著 作
专 利
项目获奖数据库
位置:
成果数据库
>
期刊
> 期刊详情页
High thermoelectric performance of solid solutions CuGa1-xInxTe2 (x = 0-1.0)
期刊名称:Appl. Phys. Lett.
时间:2012.6.12
页码:231903-
相关项目:若干宽带隙A2IIIB3VI基半导体的能带结构、微结构与热电特性
作者:
Yuan Deng|Hong Zhou|Yulan Gao|Jiaolin Cui|
同期刊论文项目
若干宽带隙A2IIIB3VI基半导体的能带结构、微结构与热电特性
期刊论文 29
获奖 2
专利 2
同项目期刊论文
Microstructure modulation responsible for the improvement in thermoelectric property of a wide-gap A
Significantly enhanced thermoelectric figure of merit through Cu, Sb co-substitutions for Te in Ga2T
宽带隙 n- 型半导体 CuIn5Se8 的热电性能研究
掺杂Cu的 (In2Te3)0.08(SnTe)0.92 化合物热电性能
Thermoelectric properties of Sb-doped Mg2Si0.59Sn0.41 solid solutions
黄铜矿型三元合金CuGaTe2的热电性能
Manipulation of the crystal structure defects: an alternative route to the reduction in lattice ther
Promising defect thermoelectric semiconductor Cu1-xGaSbxTe2(x=0-0.1) with chalcopyrite structure
Coexisting transport behaviors in quasibinary Cd(3-3m)Ga2mTe3 (m=0.75-0.98) system with structural v
Thermoelectric performance of quaternary Mg2(1+x)Si0.2Ge0.1Sn0.7 (0.06 ≤x≤ 0.12) solid solutions wit
High thermoelectric performance of a defect α-In2Se3-based solid solution upon Zn substitution for I
含硫宽禁带Ga2Te3基热电半导体的声电输运特性
Improvement of the thermoelectric performance of InSe-based alloys doped with Sn
Lattice defects and thermoelectric properties: The case of p-type CuInTe2 chalcopyrite by introducti
Thermoelectric properties of Cu2Ga4Te7 based compounds with Zn substitution for Cu and Ga
非等电子Sb替换Cu和Te后黄铜矿结构半导体Cu3Ga5Te9的热电性能
Promising defect thermoelectric semiconductors Cu1-xGaSbxTe2 (x=0-0.1) with chalcopyrite structure
Thermoelectric generator used in fire-alarm temperature sensing
Mn掺杂后三元黄铜矿结构半导体CuInTe2的缺陷特征与热电性能
Sb掺杂Mg2-xZnxSi(0≤x≤0.1)固溶体的热电性能
黄铜矿型三元合金CuGaTe_2的热电性能
宽带隙n-型半导体CuIn_5Se_8的热电性能研究