用ZnS量子点与poly-4-vinyl-phenol(PVP)复合,通过简单的旋涂法制备了结构为ITO/ZnS:PVP/A1的一次写入多次读取(WORM)的有机双稳态器件。器件起始状态为OFF态,通过正向电压的作用,器件由OFF态转变为ON态,并且在正向或反向电压的作用下,器件始终保持在ON态,表现出良好的一次写入多次读取的存储特性。与不含ZnS量子点的器件相比,含有ZnS量子点的器件表现出明显的双稳态特性,其电流开关比达到10^4,这说明ZnS量子点在器件中起到存储介质的作用。通过对器件电流一电压(I-V)特性的测试,详细讨论了器件的双稳态特性以及载流子传输机制,并且用不同的传导理论模型分析了器件在0N态和OFF态的电流传导机制。器件I-f曲线表明器件在大气环境中具有良好的永久保持特性。
A write-once-read-many-times (WORM) bistable device was prepared, in which ZnS quantum dots doped poly-4-vinyl-phenol (PVP) layer was sandwiched between ITO anode and A1 cathode. Current-voltage (I-V) curves showed a switching characteristic with a large ON/OFF ratio of 104. The electrical bistability properties and charge-transport mechanisms were discussed in detail based on I-V characteristics. The conduction mechanisms in both ON- and OFF-states were discussed in terms of different theoretical models. The data-retention characteristics of the current-tinle (I-t) curve exhibited permanent retention ability at ambient conditions.