欢迎您!
东篱公司
退出
申报数据库
申报指南
立项数据库
成果数据库
期刊论文
会议论文
著 作
专 利
项目获奖数据库
位置:
成果数据库
>
期刊
> 期刊详情页
Realization of write-once-read-many-times memory devices based on poly(N-vinylcarbazole) by thermall
时间:0
相关项目:基于纳米粒子/聚合物复合材料的有机存储器
同期刊论文项目
基于纳米粒子/聚合物复合材料的有机存储器
期刊论文 12
同项目期刊论文
Negative differential resistance and memory effect in diodes based on 1,4-dibenzyl C60 and zinc phth
Negative differential resistance and multilevel memory effects in organic devices
Single-layer organic memory devices based on N`,N-di(naphthalene-l-yl)-N,N`-diphenyl-benzidine
Negative differential resistance effect in organic devices based on an anthracene derivative
The morphology control of pentacene for write-once-read-many memory devices
Realization of negative differential resistance and switching devices based on copper phthalocyanine
Performance improvement by charge trapping of doped fluorescent dyes in organic memory devices
Memory devices based on lanthanide (Sm3+, Eu3+, Gd3+) complexes
Origin of negative differential resistance and memory characteristics in organic devices based on tr
Nonvolatile memory devices based on gold nanoparticle and poly(N-vinylcarbazole) composite
白光有机发光二极管的最新进展