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Proximity effects in topological insulator heterostructures
  • ISSN号:1674-1056
  • 期刊名称:Chinese Physics B
  • 时间:2013.9
  • 页码:-
  • 分类:O189[理学—数学;理学—基础数学] TN305.7[电子电信—物理电子学]
  • 作者机构:[1]Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China, [2]International Center for Quantum Design of Functional Materials (ICQD)/Hefei National Laboratory for Physical Sciences at the Microscale (HFNL),, [3]Department of Physics, University of Texas at Austin, Austin, Texas 78712, USA, [4]School of Physics, The University of New South Wales, Sydney 2052, Australia
  • 相关基金:Project supported by the National Natural Science Foundation of China (Grant Nos. 91021019, 51074151, and 11034006), the National Basic Research Program of China (Grant Nos. 2010CB923401 and 2011CB921801), USDOE (Grant No. DE-FG03-02ER45958), US National Science Foundation (Grant No. 0900025), and the BES Program of US Department of Energy (Grant No. ER45958).
  • 相关项目:光反应性增强导向的氧化物半导体掺杂的精确控制
中文摘要:

Topological insulators (TIs) are bulk insulators that possess robust helical conducting states along their interfaces with conventional insulators. A tremendous research effort has recently been devoted to TI-based heterostructures, in which conventional proximity effects give rise to a series of exotic physical phenomena. This paper reviews our recent studies on the potential existence of topological proximity effects at the interface between a topological insulator and a normal insulator or other topologically trivial systems. Using first-principles approaches, we have realized the tunability of the vertical location of the topological helical state via intriguing dual-proximity effects. To further elucidate the control parameters of this effect, we have used the graphene-based heterostructures as prototypical systems to reveal a more complete phase diagram. On the application side of the topological helical states, we have presented a catalysis example, where the topological helical state plays an essential role in facilitating surface reactions by serving as an effective electron bath. These discoveries lay the foundation for accurate manipulation of the real space properties of the topological helical state in TI-based heterostructures and pave the way for realization of the salient functionality of topological insulators in future device applications.

英文摘要:

Topological insulators (Tls) are bulk insulators that possess robust helical conducting states along their interfaces with conventional insulators. A tremendous research effort has recently been devoted to TI-based heterostructures, in which con- ventional proximity effects give rise to a series of exotic physical phenomena. This paper reviews our recent studies on the potential existence of topological proximity effects at the interface between a topological insulator and a normal insu- lator or other topologically trivial systems. Using first-principles approaches, we have realized the tunability of the vertical location of the topological helical state via intriguing dual-proximity effects. To further elucidate the control parameters of this effect, we have used the graphene-based heterostructures as prototypical systems to reveal a more complete phase diagram. On the application side of the topological helical states, we have presented a catalysis example, where the topo- logical helical state plays an essential role in facilitating surface reactions by serving as an effective electron bath, These discoveries lay the foundation for accurate manipulation of the real space properties of the topological helical state in TI- based heterostructures and pave the way for realization of the salient functionality of topological insulators in future device applications.

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期刊信息
  • 《中国物理B:英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编:欧阳钟灿
  • 地址:北京 中关村 中国科学院物理研究所内
  • 邮编:100080
  • 邮箱:
  • 电话:010-82649026 82649519
  • 国际标准刊号:ISSN:1674-1056
  • 国内统一刊号:ISSN:11-5639/O4
  • 邮发代号:
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  • 被引量:406