中文摘要：

利用MOCVD在Si（111）衬底上生长了无裂纹的GaN外延薄膜和AIGaN／GaN异质结构。通过优化si衬底的浸润处理时间、AIN层厚度等参数获得了无裂纹的GaN外延薄膜，研究了SiN缓冲层和插入层厚度对AlGaN／GaN异质结电学性质的影响，2DEG的迁移率和面密度分别达到l410cm2／V·S和1．16×10^13cm-2。

英文摘要：

Free-crack GaN and A1GaN/GaN heterostructure on Si substrates were grown by MOCVD. The SiN buffer layer can improve crystalline quality and electric characteristics of AlGaN/GaN heterostructure. The two-dimension electron gas （2DEG） mobility and sheet charge density achieved around 1 410 cm2/V · s and 1.16 ×10^13cm-2 at room temperature, respectively, Structural and electrical properties determined by XRD and van der Pauw Hall method were presented.