欢迎您!
东篱公司
退出
申报数据库
申报指南
立项数据库
成果数据库
期刊论文
会议论文
著 作
专 利
项目获奖数据库
位置:
成果数据库
>
期刊
> 期刊详情页
The investigation of GaInP solar cell grown by all-solid MBE
ISSN号:0022-0248
期刊名称:JOURNAL OF CRYSTAL GROWTH
时间:2013.9.1
页码:604-606
相关项目:内嵌量子点三结(Al)GaInP/InGaAs/Ge太阳电池材料的MBE生长及器件相关问题研究
作者:
Arimochi, M.|Yoshida, H.|Uchida, S.|Ikeda, M.|
同期刊论文项目
内嵌量子点三结(Al)GaInP/InGaAs/Ge太阳电池材料的MBE生长及器件相关问题研究
期刊论文 24
同项目期刊论文
A GaAs/GaInP dual junction solar cell grown by molecular beam epitaxy
Compositionally undulating step-graded InAsyP1-y buffers layer growth by metal-organic chemical vapo
The investigation of GaInP solar cell grown by all - solid MBE
Effect of High-Temperature Pregrowth Treatment on the Surface Morphology of GaInP Epilayers on Ge Gr
Investigation of InGaAsP solar cells grown by solid-state molecular beam epitaxy
High quality non-rectifying contact of ITO with both Ni and n-type GaAs
Study on photoluminescence properties of 1.05 eV InGaAsP layers grown by molecular beam epitaxy
0.6-eV bandgap In0.69Ga0.31As thermophotovoltaic devices with compositionally undulating step-graded
Effects of ultrathin AlAs interfacial layer on the structure and optical properties of GaInP epilaye
Carrier recombination dynamics of MBE grown InGaAsP layers with 1 eV bandgap for quadruple-junction
Compositionally undulating step-graded InAsyP1-y buffer layer growth by metal-organic chemical vapor
Photoluminescence and Raman studies on Ge-based complexes in Si-doped GaInP epilayers grown on Germa
Optimization of In0.68Ga0.32As Thermophotovoltaic Device Grown on Compositionally Nonmonotonically G
Investigation of InGaAs thermophotovoltaic cells under blackbody radiation
room-temperature wafer bonded GaInP/GaAs/InGaAsP/InGaAs four-junction solar cell grown by all-solid
Solid-state tellurium doping of AlInP and its application to photovoltaic devices grown by molecular
Structure and optical properties of GaInP grown on germanium by metal-organic chemical vapor deposit
Carriers transport properties in GaInP solar cells grown by molecular beam epitaxy
基于金属背支撑刻蚀技术的柔性AlGaInP/AlGaAs/GaAs三结太阳电池研制
基于分子束外延生长的1.05 eV InGaAsP的超快光学特性研究
A GaAs/GalnP dual junction solar cell grown by molecular beam epitaxy