中文摘要：

对一种黑心片样品进行了分析。在确认黑心区为低少子寿命区的基础上，发现其电阻率明显偏高；发现黑心区经Secco刻蚀后，表面密布重叠圆形蚀坑，但与普通位错蚀坑有明显特征性区别；从其密度、形状与出现条件来看，它与电子半导体业中普遍报告的氧化堆垛层错（OSF）也不一致；进一步发现黑心区经Sirtle刻蚀后，表面呈现典型的大小明显不同的两种漩涡缺陷蚀坑，其密度明显低于上述Secco蚀坑。根据所得结果推测：黑心区主要密布一种性质上与普通位错相近，而所造成晶格畸变特征与范围不同于普通位错的晶格缺陷，它不属于已知的OSF微缺陷，而可能是一种由结晶生长过程中过饱和氧沉淀诱发形成的位错环；此外，黑心区还含有少量漩涡缺陷。

英文摘要：

The black core samples were analyzed. It is confirmed that the black minority carrier lifetime. The electrical resistivity of the black region is found signifi regions are of lower cantly higher than the surroundings. After Secco etching, the black core regions are densely distributed with circular etch pits, which differ from dislocation etch pits in multiple features. Their density, shape and etching condition show that they are not OSF defects. After Sirtle etching, swirl defects appear, featured by etch pits of two largely distinguished sizes. Their density is much less than those of the Secco etch pits. The results show that, the black cores mostly consist of high density of a type of lattice defects, which are similar to dislocations in nature, while their lattice distortions differ in some features and in dimensions. They are not the known OSF micro-defect, rather they are likely dislocation-loops induced by precipitation of supersaturated oxygen during the crystal growth. In addition, swirl defects are also distributed in the black core regions as a minor type of defects.