使用pump-probe技术研究了CdTe量子点的瞬态吸收光谱,通过双指数拟合,得到两个弛豫过程,将得到快过程归结为表面俘获载流子跟价带底空穴的直接复合,即表面态辐射过程;慢过程被归结为电子被深表面态俘获,然后以发射荧光或无辐射跃迁的形式与空穴进行复合,即深表面俘获态辐射过程.并细致的研究了量子点的尺寸对单纯核的弛豫过程的影响.
The ultrafast dynamics of quantum dot CdTe is studied using femtosecond time-resolved pump/probe transient absorption spectroscopy. The biexponential decays indicate a fast The biexponential decays indicate a fast surface state emission on a scale of 1-3 picoseconds followed by a slower process on the order of 30-40 picoseconds, which was contributed to deep trapping states emission. The detail investigation of the dependence of the relaxation process on the size of quantum dot has been studied.