中文摘要：

采用改进的布里奇曼法生长出尺寸为Φ15 mm×45 mm,外观完整无开裂的Cd Ge As2单晶体。为了提高器件的使用性能,需要对晶体进行表面处理,主要对Cd Ge As2晶片表面的抛光技术进行了研究。通过对解理面切割分析得到（101）晶面,机械抛光后进行了XPS分析。对该晶面采用溴甲醇溶液进行腐蚀抛光,采用XRD回摆及光学显微镜对不同抛光时间的试样进行观测。结果表明,CGA晶体的（101）晶面在常温下采用溴甲醇溶液腐蚀50 s后,晶片表面光滑无划痕,并且具有半峰宽较小的回摆曲线,同时计算得到Cd Ge As2晶体的表面损伤层厚度。

英文摘要：

An integral CdGeAs2 （CGA） single crystal with the size of Φ15 mmΦ45 mm was obtained by the modified Bridgman method. For the reasonable application of the CGA crystal, different polishing techniques have been employed in this work. The as-grown ingot was cut and wafers with （101） plane were mechanically polished by means of metallographic abrasive papers. Then the surface element composition and valences of （101） plane on the CGA crystal were analyzed by the X-ray photoelectron spectroscopy （XPS）. Finally, the wafers were chemically polished by a bromine-methanol corrosive solution. The samples chemically polished for different time were studied by X-ray diffraction （XRD） and optical microscopy. It is found that after etching by bromine-methanol solution for 50 s at room temperature, the CdGeAs2 wafer has no scratch marks, and possesses a narrow full width at half maximum （FWHM）. Meanwhile, the thickness of the surface damage layer of CdGeAs2 wafer was also calculated.