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Modeling of Retention Failure Behavior in Bipolar Oxide-Based Resistive Switching Memory
  • ISSN号：0741-3106
  • 期刊名称：IEEE Electron Device Letters
  • 时间：0
  • 页码：276-278
  • 相关项目：氧化物基电阻存储器电阻开关特性的离子掺杂调控研究
作者： Gao, Bin|Yu, Bin|Kwong, Dim-Lee|Zhang, Haowei|Chen, Bing|Liu, Lifeng|Liu, Xiaoyan|Han, Ruqi|Kang, Jinfeng|Fang, Zheng|Yu, Hongyu|
同期刊论文项目
氧化物基电阻存储器电阻开关特性的离子掺杂调控研究
期刊论文 9 会议论文 2 专利 3
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