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Enhanced opto-electrical properties of graphene electrode InGaN/GaN LEDs with a NiOx inter-layer
  • ISSN号：0038-1101
  • 期刊名称：Solid-State Electronics
  • 时间：2015.7
  • 页码：47-51
  • 相关项目：多量子阱中无应变AlInGaN四元合金势垒的应变补偿结构制备及发光性质研究
作者： Zhang, Guogang|Xie, Zili|Wang, Xinran|Zhang, Rong|
同期刊论文项目
多量子阱中无应变AlInGaN四元合金势垒的应变补偿结构制备及发光性质研究
期刊论文 28
同项目期刊论文
High-Efficiency InGaN/GaN Nanorod Arrays by Temperature Dependent Photoluminescence
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GaN纳米柱的量子效率研究
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InN的光致发光特性研究
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GaN nanopillars with a nickel nano-island mask
氢化物气相外延生长GaN膜性质研究
背势垒对InAlN/GaN异质结构中二维电子气的影响
用氢化物气相外延（HVPE）法生长的氮化铟薄膜的性质研究
GaN hexagonal pyramids formed by a photo-assisted chemical etching method
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