中文摘要：

利用射频磁控溅射技术用N2和02作为溅射气体在石英沉底上制备了B-N共掺的P型ZnO薄膜．Hall测量结果表明，室温电阻率、载流子浓度、迁移率分别为2．3D．cm，1．2×10^17cm^-3，11cm^2／Vs．制备了ZnO基同质p-n结，研究了它们的I—V特性．探讨了B—N共掺的P型ZnO薄膜低温光致发光的微观机制．同时阐明了B—N共掺的P型ZnO薄膜的导电机制．

英文摘要：

A p-type B-N eodoped ZnO film was grown on quartz by magnetron sputtering using mixture of nitrogen and oxygen as sputtering gas. The hall measurement result indicate that the room-temperature resistivity was found to be 2.3 Ωcm with a Hall mobility of 11 cm2/Vs and carrier concentration of 1.2 × 10^17 cm^-3. The ZnO based homojunction was fabricated and the I-V characteristic was studied. We discussed the mechanism of low-temperature photoluminescence （PL） spectrum of the B-N codoped ZnO film. Meanwhile, the mechanism of p-type conductivity was discussed in the present work.