中文摘要：

采用磁控溅射后退火的方式成功制备了硒化银薄膜,膜厚约为310 nm。X射线粉末衍射分析表明所制备薄膜为单相正交结构,伴随择优取向;比较不同退火温度的效果后发现300℃退火后的薄膜样品结晶最好。扫描电子显微镜、X射线能谱分析表明300℃退火后样品均匀致密,元素组分接近原始比例,是较为适宜的退火温度。低温磁电阻测试显示薄膜样品具有明显的正磁电阻效应,90 K附近达到最大磁电阻值7.3%。霍尔系数测量得到薄膜样品室温载流子浓度与霍尔迁移率分别为2.2×1019cm-3与221 cm2·V-1·s-1。

英文摘要：

Silver selenide thin films which thickness is about 310 nm,have been prepared by annealing after magnetron sputtering. X-ray powder diffraction analysis confirms that the obtained films are of single-phase orthorhombic structure with preferred orientation,and the film after 300 ℃ annealing has the best crystallization compared with those annealed at other temperatures. Scanning electron microscopy and energy dispersive spectroscopy analyses reveal that the film after 300 ℃ annealing is homogeneous and dense with the element compositions approaching the starting compositions,which proves that 300 ℃ is more appropriate for silver selenide thin film annealing. Magnetoresistance measurement at low temperature reveals that the films have obvious positive magnetoresistance,having the maximum value 7.3% near 90 K. Hall effect study shows that the films have hall mobility of 221 cm2·V- 1·s- 1and carrier concentration of 2. 2 × 1019cm- 3at room temperature.