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Effect of growth temperature on luminescence and structure of self-assembled InAlAs/AlGaAs quantum d
  • ISSN号：0021-8979
  • 期刊名称：J. Appl. Phys. 90 (4)
  • 时间：0
  • 作者或编辑：3448
  • 第一作者所属机构：Institute of Semiconductors, Chinese Academy of Sc
  • 页码：2048－2050
  • 语言：英文
  • 相关项目：1.3微米量子点激光材料及器件应用
作者： H.Y.Liu*|B.Xu|J.J.Qian|X.L.Ye|Q.Han|D.Ding|J.B.Liang|X.R.Zhong|and Z.G.Wang|
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1.3微米量子点激光材料及器件应用
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