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电荷自旋注入机制分离的新型稀磁半导体
  • ISSN号：0379-4148
  • 期刊名称：《物理》
  • 时间：0
  • 分类：O441.1[理学—电磁学;理学—物理]
  • 作者机构：[1]中国科学院物理研究所 极端条件物理重点实验室,北京100190
  • 相关基金：自然科学基金委员会和科技部（11220101003、2013CB921703、91122035）资助项目
作者： 邓正[1], 赵侃[1], 靳常青[1]
关键词： 稀磁半导体, 电荷自旋注入分离, diluted magnetic semiconductor, decoupled charge and spin doping
中文摘要：

兼具电荷属性和自旋特性的稀磁半导体将有可能突破Moore定律的瓶颈。文章介绍了作者实验室近年来发现和研究的电荷自旋注入机制分离的新型稀磁半导体，目前这类新型稀磁半导体的铁磁转变温度可以与（Ga，Mn）As相比拟，并有望进一步实现室温铁磁。

英文摘要：

Diluted magnetic semiconductors （DMSs） that combine both charge and spin quantum freedom are promising for developing new generation information technologies. We report our recent work on new types of DMSs with decoupled charge and spin doping. Their highest Curie temperature in the bulk form is comparable to that of typical （Ga, Mn）As, making room-temperature ferromagnetism within reach.

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期刊信息
  • 《物理》
  • 北大核心期刊（2011版）
  • 主管单位:中国科学院
  • 主办单位:中国物理学会 中国科学院物理研究所
  • 主编：朱星
  • 地址：北京603信箱
  • 邮编：100190
  • 邮箱：physics@aphy.iphy.ac.cn
  • 电话：010-82649470 82649266
  • 国际标准刊号：ISSN：0379-4148
  • 国内统一刊号：ISSN：11-1957/O4
  • 邮发代号:2-805
  • 获奖情况:
  • 2002年中国科协优秀期刊三等奖,2000年度中科院优秀期刊一等奖,2001年入选“中国期刊方阵”,中国期刊方阵“双效”期刊
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  • 被引量:8902