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Surface-plasmon-enhanced deep-UV light emitting diodes based on AlGaN multi-quantum wells
  • ISSN号：2045-2322
  • 期刊名称：SCIENTIFIC REPORTS
  • 时间：2012.11.12
  • 页码：816-816
  • 相关项目：高Al组分AlGaN应变量子结构制备与特性研究
作者： Li, Jinchai|Li, Shuping|Yang, Xu|Kang, Junyong|
同期刊论文项目
高Al组分AlGaN应变量子结构制备与特性研究
期刊论文 21
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