利用二维器件模拟器MEDICI提取出重掺杂外延型衬底的电阻宏简化模型,所需的6个参数均可通过器件模拟得到,能够精确表征混合信号集成电路中的衬底噪声特性。基于0.25pmCMOS工艺所建立的电阻宏模型,设计了简单的混合信号电路进行应用验证,证明了该模型能够有效表征混合信号集成电路的衬底噪声。
A resistance macro-model of heavily doped epi-substrate is extracted by the 2-d device simulator MEDICI. The model requires only 6 parameters which can be extracted from a few of simple device simulations. This model can characterize the substrate noise in the mixed signal ICs accurately. Modeling is performed for the 0.25 μm CMOS technology and the resulting model is applied to the circuit. Finally, a comparison is made between the simulation results and the test results, and the substrate noise coupling model has been verified.