中文摘要：

采用CdSe/ZnS红光量子点（QD）,利用旋涂和真空蒸镀工艺制备了结构为ITO/TPD＋PVK/QDs/Alq3/LiF/Al的量子点发光器件（QD-LED）,并对器件的发光性能做了测试。研究了ITO表面处理、TPD空穴传输层和QD发光层的厚度对QD-LED性能的影响,并通过调整QD发光层和Alq3电子传输层的厚度,制备了可用于照明的白光QD-LED。实验结果表明,ITO的表面处理可有效降低器件的开启电压,开启电压从9 V降到7 V左右;TPD空穴传输层和QD发光层的厚度对器件的电流密度和发光亮度有较大的影响,而Alq3电子传输层和QD发光层的合理配比可以混合出较高色温的白光。通过优化器件各参数,当TPD和PVK质量比为5∶1、QD度为1.0mg/ml和Alq3厚为60nm时,制备的器件在15V电压时发光效率达到了1 500cd/m2,色坐标为（0.362 8,0.379 6）,显色指数为88.1。

英文摘要：

Quartum dot light emitting diode（QD-LED）devices（ITO/TPD＋PVK/QDs/ALq3/LiF/Al）were prepared by spin coating and vacuum vapor deposition process using CdSe/ZnS,and the electroluminescent performance of the devices is tested.The effects of ITO surface treatment,TPD hole transport layer and quantum dots light-emitting layer thickness on the QD-LED performance studied,and by adjusting the QDs light emitting layer and Alq3 electron transport layer thicknesses,the preparation can be used to realize white light QD-LED.The experimental results show that the surface treatment of ITO can reduce the turn-on voltage of the devices from 9Vto 7V;the thicknesses of TPD hole transport layer and QDs light emitting layer can affect the current density and luminance of the QD-LED devices obviously,and a reasonable proportion of the QDs light emitting layer and Alq3 electron transport layer may be selected to get white emitting The optimal device is prepared when the mass ratio of TPD and PVK is 5∶1,the concentration of QDs is 1.0mg/mL,and the thickness of Alq3 is 60nm.Luminous efficiency of the device reaches 1 500cd/m^2 at 15 Vvoltage,color coordinates are（0.362 8,0.379 6）,and the color render index（CRI）is 88.1.