中文摘要：

对单晶硅片进行不同剂量的碳离子注入，测量碳离子注入前后硅片的纳米硬度、弹性模量、硅表面与探针之间的摩擦系数和划痕深度以及硅片与Si3N4球的摩擦磨损，研究试样在过程中摩擦系数及磨损量的变化．结果表明，碳离子注入可能导致硅片表面结构的改变，从而影响了力学性能，但改善了徽摩擦学特性．碳离子注入剂量为2×10^15ions／cm。时硅片的纳米硬度和弹性模量都明显降低，但其划痕摩擦系数和划痕深度均大于未注入硅片；碳离子注入后硅片的减摩效果和耐磨性能在小载荷下得到了大幅度提高，当载荷达到一定值后，摩擦系数迅速增加并产生磨损痕迹．其磨损机制在小载荷下以粘着磨损为主，在大载荷下以材料的微疲劳和微断裂为主．

英文摘要：

The single crystal silicon wafer was implanted by carbon ion with different implanting doses. The nano-hardness and elastic modulus of silicon wafers, the scratching coefficient and depth between the indenter tip and silicon wafers, and the wear resistance of C^＋-implanted silicon wafer before and after C^＋ implantation were measured. The influence of the C^＋-implantation on the micro-tribological behavior of silicon wafer was investigated. The results demonstrated that C^＋ implantation can change the structure of surface of silicon wafer, influence the mechanical properties and improve the tribological characteristic of silicon wafer. The nano-hardness and elastic modulus decrease for silicon wafer after C^＋ implantation at the dose of 2×10^15ions/cm^2. The scratching coefficient and depth of silicon wafer after C^＋ implantation are both larger than those of silicon wafer. Friction-reducing effect of the C^＋ implanted silicon wafer improves and its coefficient of friction decreases. But when the load reaches to a certain value, the coefficient of friction increases sharply and the worn trace occurs on the silicon wafer surface. Adhesive wear is the main mechanism at light loads and fatigue and micro fracture are the main mechanism at heavy loads.