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Analysis of each branch current of serial solar cells by using an equivalent circuit model
  • ISSN号:1674-1056
  • 期刊名称:《中国物理B:英文版》
  • 分类:TN248.4[电子电信—物理电子学] TM923.59[电气工程—电力电子与电力传动]
  • 作者机构:[1]Institute for Solar Energy Systems, State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, China, [2]Guangdong Testing Institute of Product Quality Supervision, Foshan 528300, China
  • 相关基金:Project supported by the National High Technology Research and Development Program of China (Grant No. 2012AA050302), the National Natural Science Foundation of China (Grant Nos. 61076059 and 51202301), and the Science & Technology Research Project of Guangdong Province, China (Grant No. 2011A032304001).
中文摘要:

In this paper,based on the equivalent single diode circuit model of the solar cell,an equivalent circuit diagram for two serial solar cells is drawn.Its equations of current and voltage are derived from Kirchhoff’s current and voltage law.First,parameters are obtained from the I–V(current–voltage)curves for typical monocrystalline silicon solar cells(125 mm×125 mm).Then,by regarding photo-generated current,shunt resistance,serial resistance of the first solar cell,and resistance load as the variables.The properties of shunt currents(Ish1and Ish2),diode currents(ID1and ID2),and load current(IL)for the whole two serial solar cells are numerically analyzed in these four cases for the first time,and the corresponding physical explanations are made.We find that these parameters have different influences on the internal currents of solar cells.Our results will provide a reference for developing higher efficiency solar cell module and contribute to the better understanding of the reason of efficiency loss of solar cell module.

英文摘要:

In this paper, based on the equivalent single diode circuit model of the solar cell, an equivalent circuit diagram for two serial solar cells is drawn. Its equations of current and voltage are derived from Kirchhoff's current and voltage law. First, parameters are obtained from the I-V (current-voltage) curves for typical monocrystalline silicon solar cells (125 mmx 125 mm). Then, by regarding photo-generated current, shunt resistance, serial resistance of the first solar cell, and resistance load as the variables. The properties of shunt currents (Ishl and Ish2), diode currents (/D1 and/]:)2), and load current (IL) for the whole two serial solar cells are numerically analyzed in these four cases for the first time, and the corresponding physical explanations are made. We find that these parameters have different influences on the internal currents of solar cells. Our results will provide a reference for developing higher efficiency solar cell module and contribute to the better understanding of the reason of efficiency loss of solar cell module.

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期刊信息
  • 《中国物理B:英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编:欧阳钟灿
  • 地址:北京 中关村 中国科学院物理研究所内
  • 邮编:100080
  • 邮箱:
  • 电话:010-82649026 82649519
  • 国际标准刊号:ISSN:1674-1056
  • 国内统一刊号:ISSN:11-5639/O4
  • 邮发代号:
  • 获奖情况:
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  • 被引量:406