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Experimental Investigation on Alloy Scattering in sSi/Si0.5Ge0.5/sSOI Quantum-Well p-MOSFET
  • ISSN号：0018-9383
  • 期刊名称：IEEE Transactions on Electron Devices
  • 时间：2014
  • 页码：950-952
  • 相关项目：纳米MOS器件中的表面粗糙度散射机理研究
作者： Bo Zhang|Chang Liu|Jiabao Sun|Dongyuan Zhai|Yuehui Yu|Xi Wang|Yi Shi|Yi Zhao|Qingtai Zhao|
同期刊论文项目
纳米MOS器件中的表面粗糙度散射机理研究
期刊论文 9 会议论文 6
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