位置：成果数据库 > 期刊 > 期刊详情页
Restoring defect structures in 3C-SiC/Si(001) from spherical aberration-corrected high-resolution tr
  • ISSN号：0047-7206
  • 期刊名称：Micron
  • 时间：2015
  • 页码：22-31
  • 相关项目：III-V族半导体异质外延界面原子结构与应变分布规律的高分辨电子显微学研究
作者： C. Wen|W. Wan|F.H. Li|D. Tang|
同期刊论文项目
III-V族半导体异质外延界面原子结构与应变分布规律的高分辨电子显微学研究
期刊论文 13 会议论文 1
同项目期刊论文
Stress effects on electronic properties of GaAs thin film
Transmission electron microscopy investigation of crystalline silicon surface irradiated by femtosec
The influence of environment temperatures on single crystalline and polycrystalline silicon solar ce
新器件结构SGOI低场迁移率模型及数值分析
InAs量子点引入应力对调制掺杂结构中二维电子气输运特性的影响
Microstructuring and doping of monocrystalline silicon with femtosecond and nanosecond laser pulses
Evaluation of stacking faults and associated partial dislocations in AlSb/GaAs(001) interface by abe
真空蒸镀氟化镁增透膜的厚度与均匀性控制
Determining polarity and dislocation core structures at atomic level for epitaxial AlN/(0001)6H-SiC
电子束蒸镀纳米TiO2薄膜结构、相组成及亲水性研究
Static characteristics and short channel effect in enhancement-mode AlN/GaN/AlN N-polar MISFET with self-aligned source/drain regions