有二 cationic plating 添加剂, polydiaminourea 和 polyaminosulfone 的新基本电解质,在 nickel-plated 铜陪衬上为铋碲化物电影的电气化学的免职被调查。碲开始将在这电解质比铋 -0.5 V 在更高潜在的 -0.35 V 扔。当免职潜力从 -1 衰退到 -1.25 V 时, tellurium-to-bismuth 比率增加,显示在更高的潜力的运动地更快的铋免职。同样扔的电影展示好粘附到底层和光滑的形态学,并且把将近非结晶的水晶结构被 X 光检查衍射模式揭示了。
A new basic electrolyte with two cationic plating additives, polydiaminourea and polyaminosulfone, was investigated for the electrochemical deposition of the bismuth telluride film on a nickel-plated copper foil. Tellurium starts to deposit at a higher potential (-0.35 V) than bismuth (-0.5 V) in this electrolyte. The tellurium-to-bismuth ratio increases while the deposition potential declines from -1 to -1.25 V, indicating a kinetically quicker bismuth deposition at higher potentials. The as-deposited film features good adhesion to the substrate and smooth morphology, and has a nearly amorphous crystal structure disclosed by X-ray diffraction patterns.