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Bias-dependent conductive characteristics of individual GeSi quantum dots studied by conductive atom
  • 期刊名称：Nanotechnology
  • 时间：0
  • 页码：095708-1-095708-6
  • 语言：英文
  • 相关项目：单个GeSi量子点和量子环的微区电学性质研究
作者： Z M Jiang|RWu|S L Zhang|J H Lin|X J Yang|
同期刊论文项目
单个GeSi量子点和量子环的微区电学性质研究
期刊论文 9
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