采用Langmuir—Blodgett(LB)技术在新解理的云母和氧化铟锡(ITO)基片上成功地制备出富勒烯金属包合物Gd@C82/SA的单层及多.UrLangrnuir—Blodgett分子薄膜,采用原子力显微镜(AFM)和x射线光电子能谱(XPS)对所制备纳米超分子薄膜的表面形貌和表面元素组成进行了系统研究,结果表明,与纯的Gd@C82 Langmuir薄膜相比,以硬脂酸(SA)为辅助成膜材料所得到的Gd@C82/SA复合Langmuir薄膜能更好地转移到云母和ITO基片表面,其镀膜转移比接近1,当硬脂酸(SA)与Gd@C82的摩尔比达到4:1时,所对应的Gd@C82/SALB薄膜表现出良好的均一性和理想的层状结构。
Monolayer Langmuir-Blodgett (LB) films of metallofullerene Gd@C82 mixed with stearic acid (Gd@C82/SA) were deposited onto mica and ITO suhstrates from the air/water interface. The surface microstructure characteristics of the films were studied by atomic force microscopy (AFM) and X-ray Photoelectron Spectroscopy (XPS). The results showed that the Gd@C82 Langmuir Blodgett (LB) fihns with SA were easily fabricated by the vertical dipping method compared to the pure Gd@C82 film. When the molar ratio of SA: Gd@C82 was reached to 4:1, the corresponding LB films exhibited a uniform and ordered layer structure.