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A review on the dielectric materials for high energy-storage application
  • 期刊名称：Journal of Advanced Dielectrics
  • 时间：2013.4.4
  • 页码：1-14
  • 相关项目：高功率密度反铁电厚膜材料储能行为及疲劳机理研究
作者： Xihong Hao|
同期刊论文项目
高功率密度反铁电厚膜材料储能行为及疲劳机理研究
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Effects of thickness on the microstructure and energy-storage performance of PLZT antiferroelectric
Significant enhancement of energy-storage performance of (Pb0.91La0.09)(Zr0.65Ti0.35)O3 relaxor thic
Dielectric properties and energy-storage performances of (1-x)(Na0.5Bi0.5)TiO3-xSrTiO3 thick films p
Effects of raw materials on microstructure and dielectric properties of PbZrO3 antiferroelectric thi
Effects of PbO Content on the Dielectric Properties and Energy Storage Performance of (Pb0.97La0.02)
Phase Transformation Properties of Highly (100)-Oriented PLZST 2/85/12/3 Antiferroelectric Thin Film
Structure and electrical properties of PbZrO3 antiferroelectric thin films doped with barium and str
Effects of aging time of sol on the microstructure and electrical properties of (Pb0.5Ba0.5)ZrO3 thi
Fabrication and energy-storage performance of (Pb,La)(Zr,Ti)O-3 antiferroelectric thick films derive
Energy storage performance and electrocaloric effect in (100)-preferred Pb0.97La0.02(Zr0.95Ti0.05)O3
Microstructure and Improved Energy-Storage Performance of PbO-B2O3-SiO2-ZnO glass added (Pb0.97La0.0
Effect of oxide buffer layer on the microstructure and dielectric properties of PLZST 2/87/10/3 anti
Structure and dielectric performance of K-doped (Pb0.5Ba0.5)ZrO3 thin films
High energy-storage performance in Pb0.91La0.09(Ti0.65Zr0.35)O3 relaxor ferroelectric thin films
Microstructure and energy-storage performance of BaO-B2O3-SiO2 glass added (Na0.5Bi0.5)TiO3 thick fi
Effects of PbO insert layer on the microstructure and energy storage performance of (042)-preferred
Large enhancement of energy-storage properties in compositional graded (Pb1-xLax)(Zr0.65Ti0.35)O3 re
Composition-dependent dielectric and energy-storage properties in (Pb,La)(Zr,Sn,Ti)O3 antiferroelect
Preparation and energy-storage performance of PLZT antiferroelectric thick films via sol–gel method