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Impacts of additive uniaxial strain on hole mobility in bulk Si and strained-Si p-MOSFETs
  • 时间：0
  • 分类：TN386.1[电子电信—物理电子学] O346.2[理学—固体力学;理学—力学]
  • 作者机构：[1]Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, China
  • 相关基金：Project supported by the National Natural Science Foundation of China （Nos. 60636010, 60820106001）.
  • 相关项目：适用于65nm技术代以后的CMOS器件栅工程和沟道工程关键技术研究
关键词： MOSFET, 单轴应力, 流动方向, 应变硅, 添加剂, 金属氧化物半导体, 拉伸应变, 底物诱导, hole mobility enhancement, additive uniaxial strain, biaxial strain, combinational strain, channeldirection
中文摘要：

Corresponding author. Email： wang_j @tsinghua.edu.cn

同期刊论文项目
SiGe应变沟道功率MOSFET器件研究
期刊论文 4
适用于65nm技术代以后的CMOS器件栅工程和沟道工程关键技术研究
期刊论文 36 会议论文 5
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