作者机构:[1]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
相关基金:Project supported by the National Science Fund for Distinguished Young Scholars (No. 60525406), the National Natural Science Foun- dation of China (Nos, 60736031, 60806018, 60906026), the National Basic Research Program of China (No. 2006CB604903), and the National High-Tech R&D Program of China (Nos. 2007AA03Z446, 2009AA03Z403). The authors would like to acknowledge Liang Ping, Hu Ying, and Sun Hong for their help with device fabrication.