中文摘要：

分别采用过滤阴极真空电弧技术制备了不同含硼量四面体非晶碳（ta-C：B）膜，并用X射线光电子能谱（XPS）、Raman光谱对薄膜的微观结构和化学键态进行了研究．XPS分析表明薄膜中B主要以石墨结构形式存在，随着B含量的增加，sp^3杂化碳的含量逐渐减小，Ta-C：B膜的Raman谱线在含硼量较高时，其D峰和G峰向低频区偏移，且G峰的半峰宽变窄，表明B的引入促进了sp^2杂化碳的团簇化，减小了原子价键之间的变形，从而降低了薄膜的内应力．

英文摘要：

A set of boron doped tetrahedral amorphous carbon （ta-C：B） films were prepared in a filtered cathodic vacuum arc system using boron mixed graphite as targets with weight percentage ranging from 0 to 15%. The chemical bonding states of ta-C：B were studied by X-ray photoelectron spectroscope. The result shows that B is mainly threefold coordinated and the fraction of sp^3 hybridized carbon decreases in magnitude with increasing boron content. Raman analysis also shows that the introduction of B in the ta-C：B films facilitates the clustering of sp^2 carbon sites which reduces the bonding distortion and intrinsic stress of the films.