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中文摘要：
光刻技术作为制备半导体器件的关键技术之一将制约着半导体行业的发展和半导体器件的性能。随着半导体工业的发展，集成电路的特征尺寸越来越小，光刻技术将面临新的挑战。分析了激光光刻技术，包括投影式光刻和激光无掩膜光刻技术的研究现状，着重介绍了极紫外光刻（EUVL）作为下一代光刻技术的发展前景和技术难点、激光无掩膜光刻技术的发展，特别是激光近场扫描光刻、激光干涉光刻、激光非线性光刻等新技术的最新进展及其在高分辨率纳米加工领域的应用前景。
英文摘要：
Lithography technology, as one of the key technologies in the manufacture of semiconductor devices, has played an important role in the development of semiconductor industry. As the critical dimension of integrated circuit is decreased to smaller and smaller, lithography technology will face new challenges. In this review, the progress and status on laser lithography were presented, including projection lithography and laser maskless lithography. The foreground and technology challenges of extreme ultraviolet lithography（EUVL）, which was considered to be the next generation lithography, were analyzed. The progress and application prospect in high-resolution nano lithography patterning of laser maskless lithography, especially of near-field scanning optical microscopy, laser interference and nonlinearity litho~raohv etc, were discussed.
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Fast phase transition process of Ge2Sb2Te5 film induced by picosecond laser pulses with identical fl
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