中文摘要：

采用射频磁控溅射技术在室温下玻璃衬底上制备了铟镓锌氧（In—Ga—Zn-O）透明导电薄膜，并对该薄膜进行了真空退火。研究了不同退火温度对In-Ga—Zn-O薄膜结构、电学和光学性能的影响。X射线衍射（XRD）表明，在300℃至500℃退火温度范围内，In-Ga-Zn-O薄膜为非晶结构。随着退火温度的增加，薄膜的电阻率先减小后增大。透射光谱显示退火后In-Ga-Zn-O薄膜在500—800nm可见光区平均透过率超过80％，且在350nm附近表现出较强的紫外吸收特性。经过退火的薄膜光学禁带宽度随着退火温度的增加先增大后减小，350℃最大达到3．91eV。

英文摘要：

Amorphous indium gallium zinc oxide （In-Ga-Zn-O） thin films were deposited on glass substrates at room temperature by RF magnetron sputtering method and annealed in vacuum. The effects of different annealing temperature on the structure, electrical and optical characteristics were investigated systemically. The results of X-ray diffraction spectra （XRD） showed that the films before and after annealed were amorphous. The electrical resistivity decreased at first and then increased as the anneal temperature increasing from 300℃ to 500 ~C. Optical transmission spectra of the In-Ga-Zn-O samples demonstrated that all the films present a high transmittance of above 80% in the visible range form 500 nm to 800 nm and the abrupt absorption edge of the film appears at about 350 nm. The optical band gap of In-Ga-Zn-O thin films increases at first and then decreases with the increasing of anneal temperature, as many as 3.91 eV at 350℃.