中文摘要：

使用物理气相传输方法（PVT）生长出3英寸4H-SiC单晶。在生长过程中通过在粉料表面放置分布有多个贯穿孔的石墨片,在粉料表面有意引入具有一定分布规律的碳颗粒。在生长后的单晶中能够观察到与石墨片贯穿孔分布相似的包裹物分布。通过对实验结果分析,提出了碳包裹物的形成机制,作者认为生长过程中生长腔内产生的碳颗粒是单晶中碳包裹物的重要来源。并根据该分析进一步提出了减少PVT方法制备SiC单晶中碳包裹物的方法。

英文摘要：

4H-SiC single crystal with a diameter of 3 inch was grown by physical vapor transport（PVT）method. Particular distribution of weakly connected carbon particles on the surface of source powder was intentionally created during the growth process by mounting a graphite plate with multiple perforative round holes on the surface of the source powder. One-to-one correspondence between distribution of carbon inclusions in the as-grown 4H-SiC single crystal and the pattern of graphite plate was observed.The formation mechanism of carbon inclusion was proposed. It was believed that the generation of carbon particles in growth cavity is a source of carbon inclusions. The methods for reducing carbon inclusions in SiC single crystal are further proposed.