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中文摘要：
基于Jazz0．35μmSiGe工艺设计一款满足UWB和IEEE802．11a标准的低噪声放大器．采用并联电感峰化技术与Cascode结构来展宽带宽；完成了芯片版图的设计，芯片面积为1．16mm×0．78mm；在带宽为3～6GHz范围内，最大增益为26．9dB，增益平坦度为±O．9dB．放大器的输入输出匹配良好，其回波损耗s11和s22均小于-10dB，输入与输出驻波比小于1．5，1dB压缩点为-22．9dBm．在整个频段内，放大器无条件稳定．
英文摘要：
Based on Jazz 0.35 μm SiGe process, a SiGe HBT low-noise amplifier （LNA） for UWB and IEEE 802. l la application is presented. The technology of inductive shunt peaking and cascade configuration is adopted to enhance the bandwidth. Finally, the chip layout is designed with its area 1.16 × 0.78 mm2. For the range of 3 - 6 GHz bandwidth, the maximum power gain is 26.9 dB, and gain flatness is -＋0.9 dB. The input and output match well, input and output reflections （S11 and S22） are both less than -10 dB, the input VSWR and output VSWR are both less than 1.5, and the 1 dB compression point is -22.9 dBm. The LNA is unconditionally stable in the whole band.
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