中文摘要：

通过电化学沉积方法成功生长了Co掺杂ZnO的薄膜,但并没有实现室温下的铁磁性。通过NH3等离子体的后处理,导致有一部分N原子进入了ZnO晶格替代了一部分O格位,从而在ZnO中产生空穴。在空穴间接交换作用下,ZnCoO薄膜中产生了被束缚的磁极子,产生了室温下的铁磁性。

英文摘要：

The Co-doped ZnO film was grown by electrodeposition method,the carrier concentration is 1017 cm-3,but the sample is paramagnetism.The electrons can not induce the room temperature ferromagnetism,only the introducing of additional carriers can enhance the ferromagnetic exchange action and induce the room temperature ferromagnetism.Nitrogen-doped ZnCoO film was obtained in plasma-enhanced chemical vapor deposition system,where NH3 plasma provided N source.After an ammine plasma treatment the room tempe-rature ferromagnetism was detected on ZnCoO sample.So some holes generated by N doping play an important role for the room temperature ferromagnetic properties in Co doped ZnO sample.In our experiments,although the sample still is n-type semiconductor,there are some holes in the crystal generated by plasma treatment.In this theory,a bound magnetic polarons（BMPs） could be formed after the introduction of p-type dopant N.