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中文摘要：
采用磁控溅射技术在SiO2/Si（100）表面上制备了一系列不同生长温度的Ge纳米点样品。原子力显微镜（AFM）的实验结果表明：不同衬底温度下Ge纳米点在SiO2薄膜上的生长模式和尺寸分布有所不同。当衬底生长温度达到500℃时,SiO2开始与Ge原子发生化学反应,并形成＂Ge纳米点的Si窗口＂。在此温度条件下,外延生长实验可获得尺寸均匀且密度高达3.2×1010cm-2的Ge纳米点。
英文摘要：
A series of Ge nanodots with different growth temperature were prepared on SiO2 /Si（ 100） surface by magnetron sputtering technique. AFM results showed that the growth modes and size distribution for the Ge nanodots on SiO2 films are distinct at different temperature. At temperature above 500 ℃,SiO2 began to react with Ge atoms and form the so-called ＂ Si windows＂ for the growth of nucleus. Based on this temperature as a growth parameter,epitaxial Ge nanodots with an uniform size distribution and high density of 3. 2 × 1010 cm-2 were obtained on the top of ＂ Si windows＂.
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