通过真空抽滤水中分散良好的氧化石墨烯获得薄膜,并在600℃氢气气氛中保温2h还原即可获得含氧量极低的大片导电石墨烯(GE)薄膜。以X射线衍射(XRD)、红外分析(FT-IR)、拉曼光谱仪(Ra-manspectroscopy)研究氢气气氛热处理前后薄膜的物相、官能团组成和分子结构;采用SEM观察石墨烯薄膜的表面形貌;采用四探针测试仪对氢气气氛热处理前后薄膜的电学行为进行了对比考察。实验结果表明,氢气气氛热处理氧化石墨烯可以获得含氧量极低且导电性能优良的石墨烯;96mL浓度为0.0937mg/mL的氧化石墨烯溶液抽滤膜经氢气处理后获得的石墨烯薄膜方阻达到11.3Ω/□,薄膜电阻率为0.6Ω·cm。
A large-area of conductity grapnene film thin films which was prepared by fihing a graphene oxide (GO) sheet suspension through a membrane with an pore size of 25nm. The structure, morphology, composition and vibrational modes of the products were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transform infrared absorbance spectroscopy (FT-IR) and Raman spectroscopy. The electrical properties of obtained graphene thin films were tested by Four-point probe. Results showed that most of the oxygen-containing groups were reduced in the hydrogen heat-treatment process. The average sheet resistance and film resistivity of the graphene film (GE) were 11.3Ω/□, 0.6 Ω. cm,respectively