中文摘要：

利用射频磁控溅射制备了N型Bi2Te3薄膜,并测量其在不同温度、不同膜厚度条件下的Seebeck系数和电导率。室温条件下,不同厚度Bi2Te3薄膜Seebeck系数约为-150μVK-1,当温度为53℃时,5.1μm厚的薄膜Seebeck系数为-267μVK-1,而1.5μm厚的薄膜Seebeck系数为-142μVK-1。利用扫描电镜和X射线衍射仪研究了薄膜的微结构,当薄膜厚度增加时,晶粒尺寸越大。薄膜厚度为1.5μm时,晶粒尺寸为800nm,5.1μm时,晶粒尺寸为1 300nm。X射线衍射仪的分析结果表明,射频磁控溅射制备的N型Bi2Te3薄膜为菱方结构。

英文摘要：

The N-type bismuth telluride（Bi2Tea）films are deposited by using a radio frequency（R. F. ）mag- netron sputtering method. The author measures the Seebeck coefficients and the electrical conductivities at different temperatures and different thickness of the films. It has been observed that the Seebeck coefficient to film with different thickness is approximately --150μVK-1 at room temperature,When the temperature is at 53 ℃ ,the Seebeck coefficient of the film with the thickness of 5. 1 μm is approximately -267μVK-1 ,and the Seebeck coefficient to film with the thickness of 1.5 μm is to be --142μVK-1. The structural characteristics of the films has been studied by using Scanning Electron Microscopy and X-Ray Diffraction. When the thickness of the film increases,the grain size increases. When the thickness of film is 1.5 μm, the grain size is 800 nm. When the thickness of film is 5. 1 μm,the grain size is 1 300 nm The results by X-ray diffraction analysis show that N-type bismuth telluride（Bi2 Tea ）films prepared by RF magnetron sputtering are with rhombohedral structures.