利用热蒸发和溶液浸泡两步法制备了性能优良的ZnO纳米线,研究了这些ZnO纳米线的光致发光和场发射特性.与直接采用热蒸发方法生长的ZnO纳米线相比,由该方法得到的ZO纳米线表现出了更好的紫外发光特性,同时发生5nm的蓝移,场发射测试表明其开启电场和阈值电场分别达到2.3V/μm和6.8V/μm.该方法适用于制备光致发光和场发射性能优良的ZnO纳米线.
ZnO nanowires with excellent properties were synthesized by two-step method. Photoluminescence (PL) measurements showed that the ZnO nanowires have stronger ultraviolet emission properties at 376 nm and there is a 5 nm blue-shift after being immersed in thiourea (TU) solution compared with those of without immersion. The immersed ZnO nanowires show a turn-on field of 2.3 V/μm at a current density of 0.1 μA/cm^2 and emission current density up to 1 mA/cm^2 at an applied field of 6.8 V/μm, which are 2.7 V/μm and 7. 9 V/μm for those of without being immersed, respectively. So this method may be an effective method to improve the characteristics of ZnO nanowires.