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Annealing-insensitive “black silicon” with high infrared absorption
  • ISSN号：0021-8979
  • 期刊名称：Journal of Applied Physics
  • 时间：2014
  • 页码：073102-
  • 相关项目：时域太赫兹波谱法研究高电场下砷化镓内高频段的负微分电导特性
作者： Y. M. Zhu|J. Xu|R. Henderson|J. M. Dai|
同期刊论文项目
时域太赫兹波谱法研究高电场下砷化镓内高频段的负微分电导特性
期刊论文 62 会议论文 15
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