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中文摘要：
采用磁控溅射沉积方法制备Mg2Si半导体薄膜。首先在Si衬底上沉积Mg膜,随后低真空热处理。采用X射线衍射、扫描电镜、拉曼光谱对Mg2Si薄膜的结构进行表征。研究了在低真空（10-1～10-2Pa）条件下热处理温度（350～550℃）和热处理时间（3～7h）对Mg2Si薄膜形成的影响。结果表明,低真空热处理条件下制备了单一相Mg2Si半导体薄膜,400～550℃热处理4～5h是最佳的热处理条件。在拉曼谱中256和690cm-1处观察到两个散射峰,这与Mg2Si的拉曼特征峰峰位一致。
英文摘要：
Semiconducting Mg2Si films were prepared by magnetron sputtering,Mg film was deposited onto Si substrate and subsequent low vacuum heat treatment was carried out.X-ray diffraction,scanning electron microscopy and Raman spectra were performed to characterize and analyze the structure of films.Effects of heat treatment temperatures（350-550℃） and heat treatment time（3-7 h） on the formation of Mg2Si films were investigated under low vacuum（10-1-10-2Pa）.The results show that the optimal heat treatment conditions for preparing single phase Mg2Si film are 400-550℃ and 4-5h in low vacuum.Two distinguished peaks at 256 and 690cm-1 are observed in Raman scattering spectra,which are characteristic peak position of Mg2Si.
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