中文摘要：

利用磁场调控电子的自旋状态是最直接的方式,然而磁场调控方式存在实际局限性,因此探索除磁场外的物理场调控电子的自旋态,无论在理论还是实际应用都具有重要的意义。电场调控磁性（磁电效应）是一种较为普遍的效应,其将材料电极化强度与磁化强度矢量紧密联系,可应用于能量转换、弱信号传输、磁（电）场检测,信息存储等领域,但真正突破性应用是在信息存储领域。本文初步综述了近年来国内外电场调控电子的自旋态及输运性质的研究进展,包括电场调控磁各向异性、电场调控界面磁化矢量、本征磁电耦合效应、纯自旋流调控磁矩、铁电场调控隧道磁电阻、Bi Fe O3铁电畴/反铁磁畴耦合、应力媒介调控磁性、界面磁失措及轨道重整化等方面。研究表明,通过外电场调控电子的自旋状态和输运性质,提供了一种低能耗读取或写入信息的新途径,向实现低能耗磁随机存储器及逻辑器件迈出了关键步骤。特别是通过铁电场调控电子的自旋状态和输运性质,提供了非易失性电场调控电子自旋状态的新方法,为磁电耦合效应在自旋电子学中的应用奠定了基础,在信息存储领域及器件具有潜在的应用价值。

英文摘要：

The controlling of spin state and transport properties via a magnetic field is one of most direct way. However, some severe limitations exist for this method. Therefore, spin states controlled by other physical field than magnetic field are valuable in the field of spintronic for both theory and application. As a popular effect, the electric field modulated magnetic moments exist in most compounds in the world. Interestingly, magnetoelectric effect provides close relationship between electric polarization and magnetization vector. Magnetoelectric effect has widely applications, including energy conversion, weak signal transmission, magnetic （electric） field detec- tion, information storage, etc.. However, the major breakthrough would happen in the field of information storage. This paper briefly reviewed the progress in the electric-field control of spin states in recent years, such as electric-field control of magnetic anisotropy, e- lectric-field control of interface magnetization vector, pure spin current of magnetic moment, polarization-field control of tunnel magne- toresistance, antiferromagnetic domain coupling in BiFeO3 , interface magnetic disorder and orbital renormalization, etc. The modula- tion of spin state and transport properties vice electric field provided a route for the new magnetic random access memory, which was critical to realize low-energy information storage. Especially, the electron spin state controlled through ferroelectric field could realize a nonvolatile informational access process. Those results indicated that by electric-field control of electron spin state could provide a new route on the reading and writing process, which gave it great potential in the application of future informational storage device.