中文摘要：

采用射频等离子体增强型化学气相沉积（RF—PECVD）技术，以H2和SiH4作为反应气体源，在不同的衬底温度下沉积了nc-Si：H薄膜。采用Raman散射、x射线衍射、红外吸收等技术分析了薄膜的微结构和氢键合特征。结果表明，随衬底温度的升高，nc-Si：H薄膜的沉积速率不断增大，晶化率和晶粒尺寸增加，纳米硅颗粒呈现出Si（111）晶面的择优生长趋势。键合特性显示，薄膜中的氢含量随衬底温度升高而逐渐减小，薄膜均匀性先增大后减小。

英文摘要：

The nc-Si： H films was fabricated by radio frequency plasma enhanced chemical vapor deposition technique （RF-PECVD）at different substrate temperatures using Sill4 and H2 as reaction gas sources. The mierostructure and hydrogen bonding configurations of nc-Si： H thin films were analyzed using the Raman spectroscopy, X-ray diffractometer, Fourier transform infrared spectroscopy. The result indicated that with increasing substrate temperature, the deposition rate increase, the crystalline fraction and grain size increase, and nanosilicon grains present preferential growth along the （111 ） orientation. The result of bonding configurations showed that as hydrogen content decreases, uniformity of the film first the substrate temperature increasing, the total increases then decreases.