中文摘要：

针对2SC3356晶体管进行了ESD潜在性失效判别的参数研究，研究的参数包括结电容和噪声系数、结反向击穿电压和结反向漏电流，以及高温反偏的方法来检验器件是否受到潜在性损伤。提出了检验双极型硅器件受到ESD潜在性损伤的最有效方法，即精确测试器件的直流参数，特别是直流放大倍数hFn及反向漏电流工ICEO是检验双极型硅器件是否受到ESD潜在性损伤的最有效方法。

英文摘要：

This paper studied the parameters which are very likely to be the latent failure of bipolar Si-device caused by ESD. The parameters included junction capacitance, noise coefficient, reverse breakdown voltage and reverse leakage current. In addition to all of the above, the high-temperature reverse method is also used to test whether the latent failure of Si-device yielding is caused by ESD. The direct current parameters of device, especially the direct current amplification hFE and anti-flow leakage current ICEO,are the most effectively and important papameters which can be used to test whether the latent failure of bipolar Si-device yielding is caused by ESD.