为了提高微驱动器的性能,提出了一种在氧化铟锡(ITO)玻璃上加工高深宽比SU-8微结构的方法.在导电玻璃的ITO层上涂覆一薄层AZ-4620正光胶,用常规的接触式曝光法,将光刻掩模上的二维图形转移到A二4620光胶层上,显影后利用ITO玻璃的导电性,在AZ-4620光胶曝光处电沉积镍,原掩膜图形可保真地转移到ITO玻璃表面的镍镀层上,使紫外光透过ITO玻璃基底进行反面曝光,从而保证了光刻掩模与SU-8光胶层间的完全接触,消除了厚光胶层表面不平在曝光时的散射和基片材料的反射影响,成功制备了深宽比为16、侧壁垂直度为89.5。的微结构.本方法使用设备简单,加工成本低.
A method for fabricating microstructures with a high aspect ratio using SU-8 negative photoresist on indium tin oxidation (ITO) glass substrate was developed to improve the performance of micro-acutuator. Conventional contact ultraviolet (UV) lithography was applied to pattern a thin AZ-4620 positive photoresist film coated on the ITO layer of the glass. After development, the exposed AZ-4620 was lifted up, and a nickel membrane was deposited in its place by Ni electroplating. The Ni pattern formed on the ITO layer could function as an exposure mask to pattern SU-8 photoresist. A thick SU-8 negative photoresist was coated on the nickel exposure mask and UV light was illuminated from the backside. The achievement of perfect contact between mask and photoresist eliminated light scattering due to the air gap between the mask and photoresist. The influence of light reflection at the interface between photoresist and substrate could also be avoided. Experiments showed that microstructures with a high aspect ratio of about 16 and a sidewall slope of 89.5° could be fabricated with the proposed method. This fabrication method is simple, unexpensive and does not require specialized equipment.