中文摘要：

采用化学刻蚀两步法制备硅纳米线。在制作过程的不同阶段,通过金相显微镜,扫描电子显微镜及透射电子显微镜分别对其表面形态进行观察。结果表明,通过两步法制作的硅纳米线比传统刻蚀方法制作的样品具有更细的直径。光致发光的测量结果表明,两步法制备的硅纳米线在可见光领域有较强的红光发射。

英文摘要：

Silicon nanowires（SiNWs） have attracted considerable attention,because of the potential applications in the fields of nano-electronics and Si-based optoelectronics.SiNWs preparation is usually realized via a simple and efficient method called silver-assisted chemical etching.In this paper SiNWs were prepared by Two-step Chemical Etching（TSCE）,an improved silver-assisted chemical etching.Silicon wafer was etched in a mixed aqueous solution of HF and AgNO 3 to generate silver film with dendritic structure;then annealed in Ar gas to transform the dendritic structure silver film to mesh structure,and again etched in the etching solution to form SiNWs in the wafer surface.The metallographic microscope,Scanning Electron Microscopy（SEM） and Transmission Electron Microscopy（TEM） were used to analyze the surface morphology of the wafer in different stage.The SiNWs fabricated by the TSCE have finer average diameter than those in conventional etching method.Photoluminescence measurement reveals that the SiNWs fabricated by the TSCE show a strong red light emission in the visible area.