利用一种新材料(E)-2-(2-(9-ethyl-9H-carbazol-3-yl)vinyl)quinolato-Zinc(CzHQZn)作空穴传输层和发光层制备了白光有机电致发光器件(WOLED),器件的结构为indium-tin oxide(ITO)/4,4′,4′′-{N,-(2-naphthyl)-N-phenylamino}-triphenylamine(2T-NATA)(22 nm)/CzHQZn(xnm)/N,N′-bis-(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine(NPBX)(ynm)/2,9-dimethyl,-4,7-diaphenyl,1,10-phenanthroline(BCP)(10nm)/tris(8-quinolinolato)aluminum(Alq3)(68-x-ynm)/LiF(0.5 nm)/Al。研究发现发光层CzHQZn和NPBX的厚度对器件的发光性能有较大的影响。当CzHQZn厚度x为22 nm、NPBX厚度y为8 mm时,得到了色度最好和效率最大的WOLED,最大电流效率为0.9 cd/A(at ...
The white organic light-emitting devices (WOLEDs) are fabricated by using a novel yellow CzHQZn as hole-transporting/emitting layer. The device structure is indium-tin oxide(ITO)/ 4,4' ,4- IN,-(2-naphthyl)-N-phenylamino}-triphenylamine (2T-NATA) (22 nm)/CzHQZn(x nm)/N, N '-his- (1-naphthyl)-N, N '-diphenyl-1, l'-biphenyl-4,4'-diamine (NPBX) (y nm) / 2,9-dimethyl,-4,7-diaphe- nyl, 1,10-phenanthroline (tg2P) ( 10 nm) / tris (8-quinolinolato) aluminum ( Alq3 ) (68 -- x-- y nm) / LiF (0.5 nm)/Al. It is found that the thicknesses of CzHQZn and NPBX have great influence on the per formance of the WOLED. When y=22,x=8,a WOLED is achieved with a maximum luminous efficiency of 0.9 cd · A^-1 (at 7 V) ,a maximum luminance of 3 514 cd m-2 (at 10 V) ,and CIE coordinates of (0. 357 9,0. 318 2). Thus, the close point remains in the white-light-region and is close to the equal-energy white point (0. 33,0. 33). The turn-on voltage of the device is lower than 5 V.