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Effects of high-temperature O2 annealing on Al2O 3 blocking layer and Al2O3/Si3N 4 interface for MAN
  • ISSN号：0022-3727
  • 期刊名称：Journal of Physics D: Applied Physics
  • 时间：2012
  • 页码：1-5
  • 相关项目：面向三维集成的纳米尺度电荷陷阱存储器机理与可靠性研究
作者： Zhu, Chenxin|Huo, Zongliang|Zhao, Shengjie|Liu, Ming|
同期刊论文项目
面向三维集成的纳米尺度电荷陷阱存储器机理与可靠性研究
期刊论文 24 会议论文 15
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