中文摘要：

采用座滴法研究反应烧结（Reaction bonded）SiC/Co-Si体系在真空中的润湿性及界面反应,并研究Si含量和实验温度对润湿角的影响。结果表明,元素Si对反应烧结（RB）SiC/Co-Si体系的润湿性有显著影响,当Co-Si钎料粉体中Si含量（质量分数）为6.7%和60%时,体系的最终润湿角都低于SiC/纯Co体系。SiC/Co-Si体系的润湿过程属于反应性润湿,随着温度升高,润湿角明显减小。微观结构研究和XRD相分析表明,对于SiC/Co-3Si体系（Co-3Si钎料中Si的质量分数为3%）,界面区域发生了化学反应,反应产物为CoSi和碳,同时发生元素的互扩散,形成反应中间层;对于SiC/Co-60Si体系,界面反应产物只有CoSi2,界面区域没有存留碳。界面反应改变体系的界面结构,从而改善体系的润湿性。

英文摘要：

The wettability of reactive bonded（RB） SiC/Co-Si system was studied by the sessile drop technique in vacuum.The effects of Si content and wetting temperature on the wettability of the system have been investigated.Compared with the RB SiC/pure Co system,the wettability of the RB SiC/Co-Si system is remarkably affected by Si content.The final contact angles of both SiC/Co-6.7Si（mass fraction,% the same below） and SiC/Co-60Si systems are smaller than that of the SiC/pure Co system.The wetting process of the SiC/Co-Si system belongs to reactive wetting.The contact angle of the system decreases with the increasing of wetting temperature.Microstructure study and XRD phase analysis indicate that interdiffusion and interfacial reactions take place in the SiC/Co-3Si system,which leads to the formation of the interlayers,the reaction products are CoSi and carbon,while for the SiC/Co-60Si system,the reaction product is only CoSi2,there is no dissociated carbon in the interfacial area.The interfacial reactions lead to the change of the interfacial structure and result in the improvement of the wettability of the SiC/Co-Si system.