中文摘要：

采用喷雾热解法分别在普通钠钙玻璃、含SiO_2过渡层与TiO：过渡层的玻璃上制备了F掺杂SnO_2薄膜，比较了不同过渡层上生长的F掺杂SnO_2薄膜的表面形貌特点，分析了过渡层对F掺杂SnO_2膜层的光电性能的影响。结果表明，过渡层种类对F掺杂SnO_2薄膜各项性能影响很大，在SnO_2薄膜过渡层上制备的F掺杂SnO_2薄膜晶粒最小且表面致密，在TiO_2过渡层制备的F掺杂SnO_2薄膜晶粒最大，在玻璃上生长的F掺杂SnO_2薄膜较为疏松，以SnO_2为过渡层制备的F掺杂SnO_2薄膜光电性能最佳，其平均可见光透过率为82．9％，电阻率为5．33×10^-4Ω·cm，适合喷雾热解法制备性能优良的玻璃基F掺杂SnO_2薄膜。

英文摘要：

F doped SnO_2 thin films were deposited on different transition layers （ordinary sodium calcium glass, SiO_2 and TiO_2） by the spray pyrolysis method. The surface morphology characteristics of films on different transition layers were compared, and the influences of transition layers on the photoelectric properties of F doped SnO_2 thin films were investigated. The results indicate the transtion layers had great effects were on the properties of films. The film with the smallest crystal grains grown on SnO_2 buffer has the compact surface while the film with larger crystal grains grown on row glass has the porous surface. Finally, the films grown on SnO_2 buffer layer have excellent photoelectric performances with the average transmittance of 82.9% and resistivity of 5.33 × 10^-4 Ω ·cm.