中文摘要：

在不同温度下测量了稀土氧化物Gd2O3、Ce2O3掺杂ZnO—Bi2O3系压敏陶瓷的介电频谱，发现稀土氧化物的掺杂引起介电损耗显著增大。通过理论计算发现稀土氧化物掺杂后锌填隙和氧空位浓度显著增大，而耗尽层宽度明显减小。因此认为稀土氧化物引起施主性本征缺陷浓度的增大，导致Schottky势垒变薄，从而引起泄露电流的增大及非线性指数的下降。

英文摘要：

Dielectric frequency spectrum of rare earth oxides Gd2O3, Ce2O3 aduherate with ZnO- Bi2O3 series varistor ceramics at different temperatures were measured. It is found that the dielectric loss is increases apparently caused by adulteration of rare earth oxides. Through theoretically calculation it is believed that after the adulteration of rare earth oxides, the zinc gap filling and oxygen filler concentration increased significant, and width of depletion layer decreased significatly. Therefore, more electrons will jump over Schottky barrier at grainboundaries and the leak current will increases and non-linear exponent will decreases inevitably.